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Beam alignment and related problems of spherical aberration corrected high-resolution TEM images.

Journal of electron microscopy

Hu J, Tanaka N.
PMID: 11110471
J Electron Microsc (Tokyo). 2000;49(5):651-6. doi: 10.1093/oxfordjournals.jmicro.a023854.

For spherical aberration corrected transmission electron microscopes recently developed, the Scherzer resolution in proportion to C(s) 1/4 lambda 3/4 is still inevitably limited by the influence of some other electron optical factors, such as chromatic aberration coefficient of objective...

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Hu J, Tanaka N. Beam alignment and related problems of spherical aberration corrected high-resolution TEM images. J Electron Microsc (Tokyo). 2000;49(5):651-6doi: 10.1093/oxfordjournals.jmicro.a023854.
Hu, J., & Tanaka, N. (2000). Beam alignment and related problems of spherical aberration corrected high-resolution TEM images. Journal of electron microscopy, 49(5), 651-6. https://doi.org/10.1093/oxfordjournals.jmicro.a023854
Hu, J, and Tanaka, N. "Beam alignment and related problems of spherical aberration corrected high-resolution TEM images." Journal of electron microscopy vol. 49,5 (2000): 651-6. doi: https://doi.org/10.1093/oxfordjournals.jmicro.a023854
Hu J, Tanaka N. Beam alignment and related problems of spherical aberration corrected high-resolution TEM images. J Electron Microsc (Tokyo). 2000;49(5):651-6. doi: 10.1093/oxfordjournals.jmicro.a023854. PMID: 11110471.
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Microstructure of Cu(x)Mo6S8 Chevrel phase thin films on R-plane sapphire.

Journal of electron microscopy

Richard O, Van Tendeloo G, Lemee N, Le Lannic J, Guilloux-Viry M, Perrin A.
PMID: 11108040
J Electron Microsc (Tokyo). 2000;49(3):493-501. doi: 10.1093/oxfordjournals.jmicro.a023834.

Cu(x)Mo6S8 Chevrel phase thin films epitaxially grown on R-plane sapphire substrates have been studied using field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HREM). For samples grown in optimal conditions, the SEM images evidence oriented grains...

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Richard O, Van Tendeloo G, Lemee N, et al. Microstructure of Cu(x)Mo6S8 Chevrel phase thin films on R-plane sapphire. J Electron Microsc (Tokyo). 2000;49(3):493-501doi: 10.1093/oxfordjournals.jmicro.a023834.
Richard, O., Van Tendeloo G, Lemee, N., Le Lannic J, Guilloux-Viry, M., & Perrin, A. (2000). Microstructure of Cu(x)Mo6S8 Chevrel phase thin films on R-plane sapphire. Journal of electron microscopy, 49(3), 493-501. https://doi.org/10.1093/oxfordjournals.jmicro.a023834
Richard, et al. "Microstructure of Cu(x)Mo6S8 Chevrel phase thin films on R-plane sapphire." Journal of electron microscopy vol. 49,3 (2000): 493-501. doi: https://doi.org/10.1093/oxfordjournals.jmicro.a023834
Richard O, Van Tendeloo G, Lemee N, Le Lannic J, Guilloux-Viry M, Perrin A. Microstructure of Cu(x)Mo6S8 Chevrel phase thin films on R-plane sapphire. J Electron Microsc (Tokyo). 2000;49(3):493-501. doi: 10.1093/oxfordjournals.jmicro.a023834. PMID: 11108040.
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Fluctuation microscopy: a probe of atomic correlations in disordered materials.

Journal of electron microscopy

Voyles PM, Gibson JM, Treacy MM.
PMID: 11108048
J Electron Microsc (Tokyo). 2000;49(2):259-66. doi: 10.1093/oxfordjournals.jmicro.a023805.

Fluctuation microscopy is a new technique to study medium-range structure in disordered materials. Low-resolution dark-field transmission electron microscope images are interpreted as spatially resolved diffraction maps. Statistical analysis of intensity variations in these maps provides information about higher-order atom...

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Voyles PM, Gibson JM, Treacy MM. Fluctuation microscopy: a probe of atomic correlations in disordered materials. J Electron Microsc (Tokyo). 2000;49(2):259-66doi: 10.1093/oxfordjournals.jmicro.a023805.
Voyles, P. M., Gibson, J. M., & Treacy, M. M. (2000). Fluctuation microscopy: a probe of atomic correlations in disordered materials. Journal of electron microscopy, 49(2), 259-66. https://doi.org/10.1093/oxfordjournals.jmicro.a023805
Voyles, et al. "Fluctuation microscopy: a probe of atomic correlations in disordered materials." Journal of electron microscopy vol. 49,2 (2000): 259-66. doi: https://doi.org/10.1093/oxfordjournals.jmicro.a023805
Voyles PM, Gibson JM, Treacy MM. Fluctuation microscopy: a probe of atomic correlations in disordered materials. J Electron Microsc (Tokyo). 2000;49(2):259-66. doi: 10.1093/oxfordjournals.jmicro.a023805. PMID: 11108048.
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Advances in SEM-based diffraction studies of defects and strains in semiconductors.

Journal of electron microscopy

Wilkinson AJ.
PMID: 11108053
J Electron Microsc (Tokyo). 2000;49(2):299-310. doi: 10.1093/oxfordjournals.jmicro.a023810.

Two scanning electron microscope (SEM)-based diffraction techniques, i.e. electron channelling contrast imaging (ECCI) and electron back-scatter diffraction (EBSD) are used to study lattice defect and local elastic strain distributions in Si1-xGe(x) epilayers grown on Si substrates patterned with mesas....

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Wilkinson AJ. Advances in SEM-based diffraction studies of defects and strains in semiconductors. J Electron Microsc (Tokyo). 2000;49(2):299-310doi: 10.1093/oxfordjournals.jmicro.a023810.
Wilkinson, A. J. (2000). Advances in SEM-based diffraction studies of defects and strains in semiconductors. Journal of electron microscopy, 49(2), 299-310. https://doi.org/10.1093/oxfordjournals.jmicro.a023810
Wilkinson. "Advances in SEM-based diffraction studies of defects and strains in semiconductors." Journal of electron microscopy vol. 49,2 (2000): 299-310. doi: https://doi.org/10.1093/oxfordjournals.jmicro.a023810
Wilkinson AJ. Advances in SEM-based diffraction studies of defects and strains in semiconductors. J Electron Microsc (Tokyo). 2000;49(2):299-310. doi: 10.1093/oxfordjournals.jmicro.a023810. PMID: 11108053.
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Prospects of atomic resolution imaging with an aberration-corrected STEM.

Journal of electron microscopy

Ishizuka K.
PMID: 11592674
J Electron Microsc (Tokyo). 2001;50(4):291-305. doi: 10.1093/jmicro/50.4.291.

We investigated high-resolution scanning transmission electron microscope (STEM) images obtained from a microscope equipped with a spherical aberration corrector. The probe size (full-width at half-maximum) is reduced to 0.76 A at 200 kV by assuming the fifth-order spherical aberration...

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Ishizuka K. Prospects of atomic resolution imaging with an aberration-corrected STEM. J Electron Microsc (Tokyo). 2001;50(4):291-305doi: 10.1093/jmicro/50.4.291.
Ishizuka, K. (2001). Prospects of atomic resolution imaging with an aberration-corrected STEM. Journal of electron microscopy, 50(4), 291-305. https://doi.org/10.1093/jmicro/50.4.291
Ishizuka, K. "Prospects of atomic resolution imaging with an aberration-corrected STEM." Journal of electron microscopy vol. 50,4 (2001): 291-305. doi: https://doi.org/10.1093/jmicro/50.4.291
Ishizuka K. Prospects of atomic resolution imaging with an aberration-corrected STEM. J Electron Microsc (Tokyo). 2001;50(4):291-305. doi: 10.1093/jmicro/50.4.291. PMID: 11592674.
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Light element analysis in oxycarbonate superconductors using EELS.

Journal of electron microscopy

Kimoto K, Anan Y, Asaka T, Zhigadlo ND, Muromachi E, Matsui Y.
PMID: 11592675
J Electron Microsc (Tokyo). 2001;50(4):307-10. doi: 10.1093/jmicro/50.4.307.

Elemental analysis in an oxycarbonate superconductor ((Cu,N,C)Sr2CaCu2Oy) is conducted using transmission electron microscope-electron energy-loss spectroscopy with detector-gain correction. The gain correction enables highly sensitive elemental analysis and precise measurement of energy-loss near edge structures (ELNESs). It is found that...

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Kimoto K, Anan Y, Asaka T, et al. Light element analysis in oxycarbonate superconductors using EELS. J Electron Microsc (Tokyo). 2001;50(4):307-10doi: 10.1093/jmicro/50.4.307.
Kimoto, K., Anan, Y., Asaka, T., Zhigadlo, N. D., Muromachi, E., & Matsui, Y. (2001). Light element analysis in oxycarbonate superconductors using EELS. Journal of electron microscopy, 50(4), 307-10. https://doi.org/10.1093/jmicro/50.4.307
Kimoto, K, et al. "Light element analysis in oxycarbonate superconductors using EELS." Journal of electron microscopy vol. 50,4 (2001): 307-10. doi: https://doi.org/10.1093/jmicro/50.4.307
Kimoto K, Anan Y, Asaka T, Zhigadlo ND, Muromachi E, Matsui Y. Light element analysis in oxycarbonate superconductors using EELS. J Electron Microsc (Tokyo). 2001;50(4):307-10. doi: 10.1093/jmicro/50.4.307. PMID: 11592675.
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Temperature dependency of radiation damage in inorganic materials by 300 keV electrons.

Journal of electron microscopy

Mitome M, Bando Y, Kurashima K, Kitami Y.
PMID: 11469413
J Electron Microsc (Tokyo). 2001;50(3):245-9. doi: 10.1093/jmicro/50.3.245.

Temperature dependency of radiation damage in albite and natrolite was studied quantitatively by measuring the diffraction intensity with imaging plates. Radiation damage was reduced at low temperature in albite but was enhanced in natrolite. A damage process model, in...

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Mitome M, Bando Y, Kurashima K, et al. Temperature dependency of radiation damage in inorganic materials by 300 keV electrons. J Electron Microsc (Tokyo). 2001;50(3):245-9doi: 10.1093/jmicro/50.3.245.
Mitome, M., Bando, Y., Kurashima, K., & Kitami, Y. (2001). Temperature dependency of radiation damage in inorganic materials by 300 keV electrons. Journal of electron microscopy, 50(3), 245-9. https://doi.org/10.1093/jmicro/50.3.245
Mitome, M, et al. "Temperature dependency of radiation damage in inorganic materials by 300 keV electrons." Journal of electron microscopy vol. 50,3 (2001): 245-9. doi: https://doi.org/10.1093/jmicro/50.3.245
Mitome M, Bando Y, Kurashima K, Kitami Y. Temperature dependency of radiation damage in inorganic materials by 300 keV electrons. J Electron Microsc (Tokyo). 2001;50(3):245-9. doi: 10.1093/jmicro/50.3.245. PMID: 11469413.
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Structural imperfection of beta-Si3N4 crystals associated with nucleation.

Journal of electron microscopy

Xu FF, Bando Y, Zhang M, Wang CM, Mitomo M.
PMID: 11469415
J Electron Microsc (Tokyo). 2001;50(3):265-9. doi: 10.1093/jmicro/50.3.265.

No abstract available.

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Xu FF, Bando Y, Zhang M, et al. Structural imperfection of beta-Si3N4 crystals associated with nucleation. J Electron Microsc (Tokyo). 2001;50(3):265-9doi: 10.1093/jmicro/50.3.265.
Xu, F. F., Bando, Y., Zhang, M., Wang, C. M., & Mitomo, M. (2001). Structural imperfection of beta-Si3N4 crystals associated with nucleation. Journal of electron microscopy, 50(3), 265-9. https://doi.org/10.1093/jmicro/50.3.265
Xu, F F, et al. "Structural imperfection of beta-Si3N4 crystals associated with nucleation." Journal of electron microscopy vol. 50,3 (2001): 265-9. doi: https://doi.org/10.1093/jmicro/50.3.265
Xu FF, Bando Y, Zhang M, Wang CM, Mitomo M. Structural imperfection of beta-Si3N4 crystals associated with nucleation. J Electron Microsc (Tokyo). 2001;50(3):265-9. doi: 10.1093/jmicro/50.3.265. PMID: 11469415.
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In situ SEM imaging at temperatures as high as 1450 degrees C.

Journal of electron microscopy

Gregori G, Kleebe HJ, Siegelin F, Ziegler G.
PMID: 12630777
J Electron Microsc (Tokyo). 2002;51(6):347-52. doi: 10.1093/jmicro/51.6.347.

Modifications to a scanning electron microscope (SEM) and a commercially available heating stage permits in situ imaging at temperatures as high as 1450 degrees C. Here we report on the technical modifications necessary to allow such high-temperature in situ...

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Gregori G, Kleebe HJ, Siegelin F, et al. In situ SEM imaging at temperatures as high as 1450 degrees C. J Electron Microsc (Tokyo). 2002;51(6):347-52doi: 10.1093/jmicro/51.6.347.
Gregori, G., Kleebe, H. J., Siegelin, F., & Ziegler, G. (2002). In situ SEM imaging at temperatures as high as 1450 degrees C. Journal of electron microscopy, 51(6), 347-52. https://doi.org/10.1093/jmicro/51.6.347
Gregori, Giuliano, et al. "In situ SEM imaging at temperatures as high as 1450 degrees C." Journal of electron microscopy vol. 51,6 (2002): 347-52. doi: https://doi.org/10.1093/jmicro/51.6.347
Gregori G, Kleebe HJ, Siegelin F, Ziegler G. In situ SEM imaging at temperatures as high as 1450 degrees C. J Electron Microsc (Tokyo). 2002;51(6):347-52. doi: 10.1093/jmicro/51.6.347. PMID: 12630777.
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Retrieval process of high-resolution HAADF-STEM images.

Journal of electron microscopy

Nakanishi N, Yamazaki T, Recnik A, Ceh M, Kawasaki M, Watanabe K, Shiojiri M.
PMID: 12630781
J Electron Microsc (Tokyo). 2002;51(6):383-90. doi: 10.1093/jmicro/51.6.383.

A process for retrieving experimental high-resolution high-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) images, which are systematically distorted by environmental and/or instrumental instability in addition to the convolution influence of the probe, is demonstrated using a...

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Nakanishi N, Yamazaki T, Recnik A, et al. Retrieval process of high-resolution HAADF-STEM images. J Electron Microsc (Tokyo). 2002;51(6):383-90doi: 10.1093/jmicro/51.6.383.
Nakanishi, N., Yamazaki, T., Recnik, A., Ceh, M., Kawasaki, M., Watanabe, K., & Shiojiri, M. (2002). Retrieval process of high-resolution HAADF-STEM images. Journal of electron microscopy, 51(6), 383-90. https://doi.org/10.1093/jmicro/51.6.383
Nakanishi, Nobuto, et al. "Retrieval process of high-resolution HAADF-STEM images." Journal of electron microscopy vol. 51,6 (2002): 383-90. doi: https://doi.org/10.1093/jmicro/51.6.383
Nakanishi N, Yamazaki T, Recnik A, Ceh M, Kawasaki M, Watanabe K, Shiojiri M. Retrieval process of high-resolution HAADF-STEM images. J Electron Microsc (Tokyo). 2002;51(6):383-90. doi: 10.1093/jmicro/51.6.383. PMID: 12630781.
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Measurement of mean free paths for inelastic electron scattering of Si and SiO2.

Journal of electron microscopy

Lee CW, Ikematsu Y, Shindo D.
PMID: 12113621
J Electron Microsc (Tokyo). 2002;51(3):143-8. doi: 10.1093/jmicro/51.3.143.

The effects of accelerating voltage and collection angle on the mean free path for all inelastic electron scattering (lambdap), which is an important parameter for determining specimen thickness by using electron energy-loss spectroscopy, were investigated with crystalline Si and...

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Lee CW, Ikematsu Y, Shindo D. Measurement of mean free paths for inelastic electron scattering of Si and SiO2. J Electron Microsc (Tokyo). 2002;51(3):143-8doi: 10.1093/jmicro/51.3.143.
Lee, C. W., Ikematsu, Y., & Shindo, D. (2002). Measurement of mean free paths for inelastic electron scattering of Si and SiO2. Journal of electron microscopy, 51(3), 143-8. https://doi.org/10.1093/jmicro/51.3.143
Lee, Chang-Woo, et al. "Measurement of mean free paths for inelastic electron scattering of Si and SiO2." Journal of electron microscopy vol. 51,3 (2002): 143-8. doi: https://doi.org/10.1093/jmicro/51.3.143
Lee CW, Ikematsu Y, Shindo D. Measurement of mean free paths for inelastic electron scattering of Si and SiO2. J Electron Microsc (Tokyo). 2002;51(3):143-8. doi: 10.1093/jmicro/51.3.143. PMID: 12113621.
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Morphology of melt-crystallized syndiotactic polypropylene.

Journal of electron microscopy

Harasawa J, Uehara H, Yamanobe T, Komoto T.
PMID: 12113623
J Electron Microsc (Tokyo). 2002;51(3):157-66. doi: 10.1093/jmicro/51.3.157.

A transmission electron microscopy (TEM) study was made to investigate the mechanism of isothermal crystallization from melt for syndiotactic polypropylene (sPP) with a syndiotactic pentad fraction of 0.92. The TEM morphologies of RuO4-stained and ultrathin-sectioned specimens revealed a clear...

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Harasawa J, Uehara H, Yamanobe T, et al. Morphology of melt-crystallized syndiotactic polypropylene. J Electron Microsc (Tokyo). 2002;51(3):157-66doi: 10.1093/jmicro/51.3.157.
Harasawa, J., Uehara, H., Yamanobe, T., & Komoto, T. (2002). Morphology of melt-crystallized syndiotactic polypropylene. Journal of electron microscopy, 51(3), 157-66. https://doi.org/10.1093/jmicro/51.3.157
Harasawa, Jun-ichi, et al. "Morphology of melt-crystallized syndiotactic polypropylene." Journal of electron microscopy vol. 51,3 (2002): 157-66. doi: https://doi.org/10.1093/jmicro/51.3.157
Harasawa J, Uehara H, Yamanobe T, Komoto T. Morphology of melt-crystallized syndiotactic polypropylene. J Electron Microsc (Tokyo). 2002;51(3):157-66. doi: 10.1093/jmicro/51.3.157. PMID: 12113623.
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Showing 1 to 12 of 375 entries